네트워킹

High-Power 100 mW DFB Laser Diode Chips

1300 nm 100 mW CW CWDM4 DFB Laser Diode Chips

Get 100 mW of uncooled output power and 300 mW of output power when cooled, to enable 100 Gbps and 200 Gbps per lane, respectively, for cutting-edge O-band transceivers.

These chips are available in four wavelength bands to match coarse division multiplexing (CWDM) wavelength requirements in uncooled DR4 and DR8 transceivers. They feature high reliability and are qualified according to GR-468 for use in non-hermetic packages.

High-Power 100mW Laser Diode Chips

Get these chips tested and Inspected on translucent tape with grip-ring Ø 150 mm. Future-proof technology that can support advanced silicon transceiver designs to 1.6T.

데이터시트

주요 기능

  • Designed for uncooled O-band CWDM4

  • Qualified according to GR-468 for use in non-hermetic packages

  • Excellent reliability

  • Top anode and backside cathode configuration

  • RoHS 준수

  • Available wavelengths - CWDM4 1270 nm to 1330 nm

관련 제품

주요 성공 사례

레이저 프레임워크, 지멘스의 디지털 팩토리에서 두각을 나타내다

Coherent 개발 지원과 Coherent FrameWork 소프트웨어를 통해 지멘스는 ID Link 제조 프로그램을 성공적으로 구현할 수 있었습니다.

성공 사례 읽어보기