재료
III-V RF 에피택셜 웨이퍼
Improve efficiency, bandwidth, and reliability when making high-speed electronic components by starting with our consistent, high-performance, III-V epitaxial wafers.
Coherent has extensive capabilities for the development, design, and fabrication of advanced III-VI semiconductor epitaxial wafers. We enable you to easily bring next-generation technology to your application and support you with volume production.
RF Wafer Capability
Source 2-inch to 6-inch wafers for wireless devices, datacenters, high-speed communication networks, and more.
Device Type |
Base Material |
Material Capability |
Wafer Diameter |
EpiHBT® |
GaAs |
InGaP/GaAs, AlGaAs/GaAs |
up to 150mm |
인듐 포스파이드 |
InP/InGaAs |
up to 100mm |
|
EpiBiFET® |
GaAs |
InGaP/GaAs, AlGaAs/GaAs |
up to 150mm |
인듐 포스파이드 |
InP/InGaAs, InP/InAlAs |
up to 100mm |
|
EpiFET® |
GaAs |
AlGaAs/GaAs, InGaP/GaAs |
up to 150mm |
인듐 포스파이드 |
InP/InGaAs, InP/InAlAs |
up to 100mm |
관련 제품
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SiC Circuitry Makes EVs Better
Coherent is one of the few companies worldwide with a complete, vertically integrated SiC manufacturing capability. We produce SiC wafers and epitaxy, all the way through power devices and modules. Furthermore, the unmatched quality with which we can produce SiC material makes Coherent virtually the only supplier positioned to successfully transition from the current standard wafer diameter of 150 mm up to 200 mm.
주요 성공 사례
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Coherent 개발 지원과 Coherent FrameWork 소프트웨어를 통해 지멘스는 ID Link 제조 프로그램을 성공적으로 구현할 수 있었습니다.
