SiC Substrates & Epitaxy

직경 200mm에 달하는 고품질 SiC 웨이퍼를 기반으로 다양한 고성능 전력 전자 소자를 제조합니다.

전력 전자용 SiC

Fabricate MOSFETs, IGBTs, and other components for high-temperature, high-frequency power electronics used in electric and hybrid vehicles, and aerospace applications.

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RF 전자기기용 SiC

Scale up the production of GaN-on-SiC RF power amplifiers and other RF and microwave devices with Coherent high-quality semi-insulating SiC substrates.

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SiC 에피택시

Accelerate time-to-market, reduce costs, and improve device performance by building on high-performance SiC epitaxial wafers from Coherent in up to 200 mm diameter.

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